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?2004 fairchild semiconductor corporation www.fairchildsemi.com rev.1.0.4 features ? quasi resonant converter controller ? internal burst mode controller for stand-by mode ? pulse by pulse current limiting ? over current latch protection ? over voltage protection (vsync: min. 11v) ? internal thermal shutdown function ? under voltage lockout ? internal high voltage sense fet ? auto-restart mode description the fairchild power switch(fps) product family is specially designed for an off-line smps with minimal external components. the fairchild power switch(fps) consist of high voltage power sensefet and current mode pwm controller ic. pwm controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete mosfet and controller or r cc switching converter solution, a fairchild power switch(fps) can reduce total component count, design size, and weight and at the same time increase & efficiency, productivity, and system reliability. it has a basic platform well suited for cost-effective design in quasi resonant converter as c-tv power supply. to-220f-5l 1. drain 2. gnd 3. v cc 4. fb 5. sync to-3pf-5l 1 1 internal block diagram - + rsense 11v on 12v off 3 1 2 4 vref internal bias s q r leb 450ns s qb r ro n rof f power on reset ovp olp 7.5v - + 12v sync - + - + uvlo 15v/9v 5 burst mode 3.5v/1.25v sync sync sync sync - + r 2.5r - + - + offset thermal thermal thermal thermal shut down shut down shut down shut down s q r power on reset (vcc=6.5v) delay 80ns 1v - + ocl 1v feedback feedback feedback feedback vcc vcc vcc vcc drain drain drain drain source source source source normal mode 4.6v/2.6v osc - + - + idelay ifb vref 32v 1% + - ron roff ka5q-series ka5q0765rt/ka5q12656rt/ka5q1265rf/ ka5q1565rf fairchild power switch(fps)
ka5q-series 2 absolute maximum ratings (ta=25 c, unless otherwise specified) characteristic symbol value unit ka5q0765rt drain-source voltage v dss 650 v drain-gate voltage(r gs =1m ?) v dgr 650 v gate-source(gnd) voltage v gs 30 v drain current pulsed (1) i dm 15 adc continuous drain current (tc = 25 c) i d 3.8 adc continuous drain current (tc = 100 c) i d 2.4 adc single pulsed avalanch current (3) (energy (2) )i as (e as ) 20(570) a(mj) maximum supply voltage v cc,max 40 v input voltage range v fb -0.3 to v cc v v sync -0.3 to 13 v total power dissipation p d 47 w operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c thermal resistance rthjc 2.7 c/w esd capability, hbm model (all pins) 2.0 kv esd capability, machine model (all pins) 300 v ka5q12656rt drain-source voltage v dss 650 v drain-gate voltage(r gs =1m ?) v dgr 650 v gate-source(gnd) voltage v gs 30 v drain current pulsed (1) i dm 21 adc continuous drain current (tc = 25 c) i d 5.3 adc continuous drain current (tc = 100 c) i d 3.4 adc single pulsed avalanch current(energy (2) )i as (e as ) 30(950) a(mj) maximum supply voltage v cc,max 40 v input voltage range v fb -0.3 to v cc v v sync -0.3 to13 v total power dissipation p d 55 w operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c thermal resistance rthjc 2.7 c/w esd capability, hbm model (all pins) 2.0 kv esd capability, machine model (all pins) 300 v
ka5q-series 3 absolute maximum ratings (continued) (ta=25 c, unless otherwise specified) note: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 10mh, v dd =50v, r g = 27 ? , starting tj = 25 c 3. l = 13uh, starting tj = 25 c characteristic symbol value unit ka5q1265rf drain-source voltage v dss 650 v drain-gate voltage(r gs =1m ?) v dgr 650 v gate-source(gnd) voltage v gs 30 v drain current pulsed (1) i dm 36 adc continuous drain current (tc = 25 c) i d 8.3 adc continuous drain current (tc = 100 c) i d 5.3 adc single pulsed avalanch current(energy (2) )i as (e as ) 33(950) a(mj) maximum supply voltage v cc,max 40 v input voltage range v fb -0.3 to v cc v v sync -0.3 to 13 v total power dissipation p d 95 w operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c thermal resistance rthjc 2.7 c/w esd capability, hbm model (all pins) 2.0 kv esd capability, machine model (all pins) 300 v ka5q1565rf drain-source voltage v dss 650 v drain-gate voltage(r gs =1m ?) v dgr 650 v gate-source(gnd) voltage v gs 30 v drain current pulsed (1) i dm 60 adc continuous drain current (tc = 25 c) i d 10.3 adc continuous drain current (tc = 100 c) i d 6.6 adc single pulsed avalanch current(energy (2) )i as (e as ) 36(1050) a(mj) maximum supply voltage v cc,max 40 v input voltage range v fb -0.3 to v cc v v sync -0.3 to 13 v total power dissipation p d 98 w operating junction temperature. t j +160 c operating ambient temperature. t a -25 to +85 c storage temperature range. t stg -55 to +150 c thermal resistance rthjc 2.7 c/w esd capability, hbm model (all pins) 2.0 kv esd capability, machine model (all pins) 300 v
ka5q-series 4 electrical characteristics (sfet part) (ta=25 c unless otherwise specified) parameter symbol conditions min. typ. max. unit ka5q0765rt drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v - - 200 a v ds =0.8max., rating, v gs =0v, t c =85 c - - 300 a static drain-source on resistance (1) r ds (on) v gs =10v, i d =4.0a - 1.3 1.6 ? input capacitance ciss v gs =0v, v ds =25v, f = 1mhz -1110- pf output capacitance coss - 105 - reverse transfer capacitance crss - 50 - turn on delay time td(on) v dd =0.5bv dss , i d =7.0a (mosfet switching time are essentially independent of operating temperature) -25- ns rise time tr - 55 - turn off delay time td(off) - 80 - fall time tf - 50 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =7.0a, v ds =0.5bv dss (mosfet switching time are essentially independent of operating temperature) -5774 nc gate-source charge qgs - 9.3 - gate-drain (miller) charge qgd - 29.3 - ka5q12656rt/ka5q1265rf drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v - - 200 a v ds =0.8max., rating, v gs =0v, t c =85 c - - 300 a static drain-source on resistance (1) r ds(on) v gs =10v, i d =6a - 0.7 0.9 ? input capacitance ciss v gs =0v, v ds =25v, f = 1mhz - 1820 - pf output capacitance coss - 185 - reverse transfer capacitance crss - 32 - turn on delay time td(on) v dd =0.5bv dss , i d =12.0a (mosfet switching time are essentially independent of operating temperature) -38- ns rise time tr - 120 - turn off delay time td(off) - 200 - fall time tf - 100 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =12.0a, v ds =0.5bv dss (mosfet switching time are essentially independent of operating temperature) -6078 nc gate-source charge qgs - 10 - gate-drain (miller) charge qgd - 30 -
ka5q-series 5 absolute maximum ratings (sfet part) (ta=25 c, unless otherwise specified) note: 1. pulse test: pulse width 300 s, duty cycle 2% characteristic symbol test condition min. typ. max. unit ka5q1565rf drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v - - 200 a v ds =0.8max., rating, v gs =0v, t c =85 c - - 300 a static drain-source on resistance (note) r ds(on) v gs =10v, i d =7.3a - 0.5 0.65 w input capacitance ciss v gs =0v, v ds =25v, f=1mhz - 2580 - pf output capacitance coss - 270 - reverse transfer capacitance crss - 50 - turn on delay time td(on) v dd =0.5bv dss , i d =14.6a (mosfet switching time are essentially independent of operating temperature) -50- ns rise time tr - 155 - turn off delay time td(off) - 270 - fall time tf - 125 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =14.6a, v ds =0.8bv dss (mosfet switching time are essentially independent of operating temperature) -90117 nc gate-source charge qgs - 15 - gate-drain (miller) charge qgd - 45 -
ka5q-series 6 electrical characteristics (control part) (ta=25 c unless otherwise specified) parameter symbol conditions min. typ. max. unit uvlo section start threshold voltage v start v fb =gnd 14 15 16 v stop threshold voltage v stop v fb =gnd 8 9 10 v oscillator section initial frequency f osc - 182022khz voltage stability f stable 12v v cc 23v 0 1 3% temperature stability (note2) ? f osc -25 c a 85 c0 5 10 % maximum duty cycle d max - 929598% minimum duty cycle d min ---0% feedback section feedback source current i fb v fb =gnd 0.7 0.9 1.1 ma shutdown feedback voltage v sd v fb 6.9v 6.9 7.5 8.1 v shutdown delay current i delay v fb =5v 456 a sync. section normal sync high threshold voltage v nsh v cc =16v, vfb=5v 4.0 4.6 5.2 v normal sync low threshold voltage v nsl v cc =16v, vfb=5v 2.3 2.6 2.9 v burst sync high threshold voltage v bsh v cc =10.5v, vfb=0v 3.2 3.6 4.0 v burst sync low threshold voltage v bsl v cc =10.5v, vfb=0v 1.1 1.3 1.5 v burst mode section burst mode low threshold voltage v burl v fb =0v 10.4 11.0 11.6 v burst mode high threshold voltage v burh v fb =0v 11.4 12.0 12.6 v burst mode enable feedback voltage v ben v cc =10.5v 0.7 1.0 1.3 v burst mode peak current limit(note4) i burpk v cc =10.5v , v fb =0v 0.65 0.85 1.1 a current limit(self-protection)section peak current limit (note4) i over ka5q0765rt 4.40 5.00 5.60 a ka5q12656rt 5.28 6.00 6.72 ka5q1265rf 7.04 8.00 8.96 ka5q1565rf 10.12 11.50 12.88 protection section over voltage protection v ovp v sync 11v 11 12 13 v over current latch voltage(note3) v ocl - 0.9 1.0 1.1 v thermal shutdown tempature(note2) tsd - 140 160 - c
ka5q-series 7 electrical characteristics (control part) (continued) (ta=25 c unless otherwise specified) note: 1. these parameters is the current flowing in the control ic. 2. these parameters, although guaranteed, are not 100% tested in production 3. these parameters, although guaranteed, are tested in eds(wafer test) process 4. these parameters are indicated inductor current. parameter symbol conditions min. typ. max. unit total device section start up current i start v fb =gnd, v cc =14v - 0.1 0.2 ma operating supply current(note1) i op v fb =gnd, v cc =16v -1018ma i op(min) v fb =gnd, v cc =12v i op(max) v fb =gnd, v cc =28v primary side regulation section (only ka5q0765rt/ka5q12656rt) primary regulation threshold voltage v pr i fb =700ua, v fb =4v 32.0 32.5 33.0 v primary regulation transconductance g pr - 2.0 2.6 - ma/v
ka5q-series 8 typical performance characteristics figure 1. start threshold voltage figure 2. stop threshold voltage figure 3. start up current figure 4. operting supply current figure 5. initial freqency figure 6. maximum duty 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) v jtop 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) v start 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) i op 0.80 0.87 0.94 1.01 1.08 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc)
ka5q-series 9 typical performance characteristics (continued) figure 7. feedback offset voltage figure 8. feedback source current figure 9. over voltage protection figure 10. shutdown feedback voltage figure 11. shutdown delay current figure 12. burst mode enable feedback voltage 0.80 0.88 0.96 1.04 1.12 1.20 -25 0 25 50 75 100 125 150 tem p.(oc) 0.00 0.30 0.60 0.90 1.20 1.50 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.60 0.80 1.00 1.20 1.40 -25 0 25 50 75 100 125 150 tem p.(oc) 0.85 0.90 0.95 1.00 1.05 1.10 -25 0 25 50 75 100 125 150 tem p.(oc)
ka5q-series 10 typical performance characteristics (continued) figure 13. burst mode low threshold voltage figure 14. burst mode highthreshold voltage figure 15. burst sync. high threshold voltage figure 16. burst sync. low threshold voltage figure17. primary regulation threshold voltage figure 18. primary regulation transconductance 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.80 0.88 0.96 1.04 1.12 1.20 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc)
ka5q-series 11 typical performance characteristics (continued) figure 19. peak current limit figure 20. burst mode peak current limit figure 21. normal sync. high threshold voltage figure 22. normal sync. low threshold voltage 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc) 0.90 0.94 0.98 1.02 1.06 1.10 -25 0 25 50 75 100 125 150 tem p.(oc)
ka5q-series 12 package dimensions to-220f-5l
ka5q-series 13 package dimensions (continued) to-220f-5l(forming)
ka5q-series 14 package dimensions (continued) to-3pf-5l
ka5q-series 15 package dimensions (continued) to-3pf-5l(forming)
ka5q-series 12/16/04 0.0m 001 stock#dsxxxxxxxx ? 2004 fairchild semiconductor corporation life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ordering information tu : non forming type ydtu : forming type product number package rating i over ka5q0765rttu to-220f-5l 650v, 7a 5a ka5q0765rtydtu to-220f-5l (forming) ka5q12656rttu to-220f-5l 650v,12a 6a ka5q12656rtydtu to-220f-5l (forming) ka5q1265rftu to-3pf-5l 650v,12a 8a ka5q1265rfydtu to-3pf-5l (forming) ka5q1565rftu to-3pf-5l 650v,15a 11.5a ka5q1565rfydtu to-3pf-5l (forming)

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